AIE posts exceptional research results from major scientific journals on its website. AIE introduces them to private enterprises world-wide and provides consulting and matching services. AIE is interested in the following article published by Prof. Washio et al. in 2015; Prof. Washio and others who found the incorporation of transition metal, Vanadium, gave good crystallinity of ZnO thin film grown on c-face sapphire.

A fact that an independent organization overseas has expressed interest in the material proves the importance of practical and applicable research.

Presented article: "Low-temperature heteroepitaxial growth of single-domain V-doped ZnO films on c -face sapphire", H. Chiba, T. Mori, T. Kawashima, K. Washio.

Journal of Electronic Materials, 44, 1351-1356 (2015).
[DOI: 10.1007/s11664-014-3587-2]

 

 

[Contact:]
Division of Public Relations School of Engineering, Tohoku University